Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

= 0V, I

= 250µA)

On State Drain Current

> I

D(on)

x R

DS(on)

Max, V

= 10V)

Drain-Source On-State Resistance

= 10V, 0.5 I

D[Cont.]

)

Zero Gate Voltage Drain Current (V

= V

DSS

, V

= 0V)

Zero Gate Voltage Drain Current (V

= 0.8 V

DSS

, V

= 0V, T

= 125°C)

Gate-Source Leakage Current (V

= ±30V, V

= 0V)

Gate Threshold Voltage (V

= V

, I

= 2.5mA)

050-5900 Rev A 8-2000

MAXIMUM RATINGS

All Ratings: T

= 25°C unless otherwise specified.

Symbol

DSS

GSM

STG

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

= 25°C

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

STATIC ELECTRICAL CHARACTERISTICS

Symbol

DSS

D(on)

DS(on)

DSS

GSS

GS(th)

UNIT

Volts

Amps

Ohms

µA

Volts

MIN

TYP

MAX

500

0.100

250

±100

APT5010

500

188

±30

±40

520

4.16

-55 to 150

300

2500

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

Bend, Oregon 97702-1035

Phone: (541) 382-8028

FAX: (541) 388-0364

EUROPE

Chemin de Magret

F-33700 Merignac - France

Phone: (33) 5 57 92 15 15

FAX: (33) 5 56 47 97 61

T-MAXTM

TO-264

B2LC

LLC

Power MOS VI

is a new generation of low gate charge, high voltage

N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C

iss

and

rss

. Lower gate charge coupled with Power MOS VI

optimized gate

layout, delivers exceptionally fast switching speeds.

· Identical Specifications:

T-MAXTM

or TO-264 Package

· Lower Gate Charge & Capacitance

· Easier To Drive

· 100% Avalanche Tested

· Faster switching

POWER MOS VI

APT5010B2LC

APT5010LLC

500V 47A 0.100

, THERMAL IMPEDANCE (

°
C/W)

-5

-4

-3

-2

-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.3

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t1/t

Peak TJ = PDM x Z

JC + TC

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

DYNAMIC CHARACTERISTICS

Symbol

iss

oss

rss

d(on)

d(off)

Test Conditions

= 0V

= 25V

f = 1 MHz

= 10V

= 0.5 V

DSS

= I

D[Cont.]

@ 25°C

= 15V

= 0.5 V

DSS

= I

D[Cont.]

@ 25°C

= 0.6

MIN

TYP

MAX

5375

6500

1040

1460

185

280

145

220

120

4.6

10.0

UNIT

APT5010B2LC - LLC

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current

(Body Diode)

Diode Forward Voltage

= 0V, I

= -I

D[Cont.]

)

Reverse Recovery Time (I

= -I

D[Cont.]

, dl

/dt = 100A/µs)

Reverse Recovery Charge (I

= -I

D[Cont.]

, dl

/dt = 100A/µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

µC

MIN

TYP

MAX

188

1.3

590

Repetitive Rating: Pulse width limited by maximum junction

See MIL-STD-750 Method 3471

temperature.

Starting T

+25°C, L = 2.26mH, R

, Peak I

= 47A

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL CHARACTERISTICS

Symbol

MIN

TYP

MAX

0.24

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

Symbol

r r

050-5900 Rev A 8-2000

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS

FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

, GATE-TO-SOURCE VOLTAGE (VOLTS)

, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS

FIGURE 5, R

(ON) vs DRAIN CURRENT

, CASE TEMPERATURE (°C)

, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE

FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

, JUNCTION TEMPERATURE (°C)

, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

(ON), DRAIN-TO-SOURCE ON RESISTANCE

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

(TH), THRESHOLD VOLTAGE

DSS

, DRAIN-TO-SOURCE BREAKDOWN

(ON), DRAIN-TO-SOURCE ON RESISTANCE

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

VOLTAGE (NORMALIZED)

100

150

200

250

100

125

150

-50

-25

100

125 150

-50

-25

100

125 150

-50

-25

100

125

150

APT5010B2LC - LLC

= 0.5 I

[Cont.]

= 10V

100

1.5

1.4

1.3

1.2

1.1

1.0

0.9

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.1

1.0

0.9

0.8

0.7

0.6

100

160

140

120

100

2.5

2.0

1.5

1.0

0.5

0.0

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

7.5V

6.5V

5.5V

VGS= 8V, 10V & 15V

7.5V

6.5V

5.5V

VGS=10V

VGS=20V

TJ = +25°C

TJ = -55°C

TJ = +125°C

TJ = +25°C

VGS= 10V & 15V

NORMALIZED TO

= 10V @ 0.5 I

[Cont.]

TJ = -55°C

050-5900 Rev A 8-2000

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

, TOTAL GATE CHARGE (nC)

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

, GATE-TO-SOURCE VOLTAGE (VOLTS)

, DRAIN CURRENT (AMPERES)

, REVERSE DRAIN CURRENT (AMPERES)

C, CAPACITANCE (pF)

APT5010B2LC - LLC

TC =+25°C

TJ =+150°C

SINGLE PULSE

200

100

OPERATION HERE

LIMITED BY RDS (ON)

100µS

1mS

10mS

Crss

APT's devices are covered by one or more of the following U.S.patents: 4,895,810

5,045,903

5,089,434

5,182,234

5,019,522

5,262,336

5,256,583

4,748,103

5,283,202

5,231,474

5,434,095

5,528,058

50 100

500

.01

100

150

200

250

0.4

0.8

1.2

1.6

2.0

Coss

Ciss

20,000

10,000

5,000

1,000

500

100

200

100

VDS=250V

VDS=100V

VDS=400V

= I

[Cont.]

TJ =+150°C

TJ =+25°C

T-MAX

(B2) Package Outline

TO-264 (L) Package Outline

15.49 (.610)
16.26 (.640)

5.38 (.212)
6.20 (.244)

4.50 (.177) Max.

19.81 (.780)
20.32 (.800)

20.80 (.819)
21.46 (.845)

1.65 (.065)
2.13 (.084)

1.01 (.040)
1.40 (.055)

5.45 (.215) BSC

2.87 (.113)
3.12 (.123)

4.69 (.185)
5.31 (.209)

1.49 (.059)
2.49 (.098)

2.21 (.087)
2.59 (.102)

0.40 (.016)
0.79 (.031)

Drain

Source

Gate

These dimensions are equal to the TO-247 without the mounting hole.

Drain

2-Plcs.

19.51 (.768)
20.50 (.807)

19.81 (.780)
21.39 (.842)

25.48 (1.003)
26.49 (1.043)

2.29 (.090)
2.69 (.106)

0.76 (.030)
1.30 (.051)

3.10 (.122)
3.48 (.137)

4.60 (.181)
5.21 (.205)

1.80 (.071)
2.01 (.079)

2.59 (.102)
3.00 (.118)

0.48 (.019)
0.84 (.033)

Drain

Source

Gate

Dimensions in Millimeters and (Inches)

Drain

2.29 (.090)
2.69 (.106)

5.79 (.228)
6.20 (.244)

2.79 (.110)
3.18 (.125)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

050-5900 Rev A 8-2000

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